High performance InGaAsP lasers fabricated by ion-implantation induced quantum well intermixing
نویسندگان
چکیده
منابع مشابه
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the diff...
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Interband nonradiative Auger recombination in quantumwell InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of To at around room temperatures. A CONTINUI...
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متن کاملInGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering
The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 1C with arsenic (As) and phosphorus (P) ions, at various doses, where the ions were accelerated at 360 keV with the ion angle tilted by 71. Compared with impurity-free induced intermixing, the intermixing degree is significantly ...
متن کاملA comparison of impurity-free and ion-implantation-induced intermixing of InGaAsÕInP quantum wells
We have compared the time integrated photoluminescence ~PL! and the time resolved PL of several lattice matched InGaAs/InP quantum wells intermixed either by ion implantation or an impurity-free method. We have found that the carrier capture rates into quantum wells and carrier relaxation from the wells depend on the type of intermixing used. Our results indicate that the carrier lifetimes are ...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2008
ISSN: 1349-2543
DOI: 10.1587/elex.5.901